ZnO nanobelts grown on Si substrate
- 1 July 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (1), 144-146
- https://doi.org/10.1063/1.1492008
Abstract
Using infrared irradiation to heat an industrial brass (Cu–Zn alloy) disk in moderate vacuum, ZnO nanobelts were directly prepared on a Si substrate. The nanobelts had a single-crystal hexagonal structure and grew along the [0001] direction. The nanobelts had two distinct widths along their entire length. Photoluminescence measurement showed that the nanobelts had an intensive near-band ultraviolet emission at 379 nm. Large-area growth and high quality indicate that the prepared ZnO nanobelts have potential application in optoelectronic devices.Keywords
This publication has 16 references indexed in Scilit:
- Structural and optical properties of epitaxial and bulk ZnOApplied Physics Letters, 2002
- Low-Temperature Growth of Well-Aligned ZnO Nanorods by Chemical Vapor DepositionAdvanced Materials, 2002
- Room-Temperature Ultraviolet Nanowire NanolasersScience, 2001
- Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN bufferApplied Physics Letters, 2001
- Catalytic Growth of Zinc Oxide Nanowires by Vapor TransportAdvanced Materials, 2001
- Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approachApplied Physics Letters, 2001
- Uniaxial locked epitaxy of ZnO on the a face of sapphireApplied Physics Letters, 2000
- Ordered semiconductor ZnO nanowire arrays and their photoluminescence propertiesApplied Physics Letters, 2000
- Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substratesApplied Physics Letters, 1999
- Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopyApplied Physics Letters, 1998