Optical waveguiding in a single-crystal layer of germanium silicon grown on silicon
- 1 March 1990
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 15 (5), 270-272
- https://doi.org/10.1364/ol.15.000270
Abstract
Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm-thick, single-crystal layer of Ge0.1Si0.9 grown by chemical-vapor deposition upon an intrinsic (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was 1.9 dB/cm.Keywords
This publication has 7 references indexed in Scilit:
- The effect of band-tails on the design of GaAs/AlGaAs bipolar transistor carrier-injected optical modulator/switchIEEE Journal of Quantum Electronics, 1989
- Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operationApplied Physics Letters, 1986
- All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µmIEEE Journal of Quantum Electronics, 1986
- Avalanche gain in GexSi1-x/Si infrared waveguide detectorsIEEE Electron Device Letters, 1986
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958