Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
- 1 May 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (5), 1036-1041
- https://doi.org/10.1109/16.760414
Abstract
A numerical model for obtaining linear doping profiles in the drift region of high-voltage thin-film SOI devices is proposed and experimentally verified. Breakdown voltage in excess of 612 V on LDMOS transistors with 0.15-mu m SOI layer, 2-mu m buried oxide, and 50-mu m drift region is designed and demonstrated using this model. Theoretical and experimental dependence of the breakdown voltage on the drift region length are compared. Good agreement between the simulation and experimental results are obtained. Dependence of the breakdown voltage on the doping density and doping concentration slope in the linearly doped drift region is also investigated experimentally, Results indicate that an optimum concentration slope is needed in order to optimize the breakdown voltage in the thin-film SOI devices with a linear doping drift region. Finally, a 600-V CMOS compatible thin-film SOI LDMOS process is also describedKeywords
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