Thermal detection mechanism of SiC based hydrogen resistive gas sensors
- 30 October 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (18), 182102
- https://doi.org/10.1063/1.2360905
Abstract
Siliconcarbide(SiC)resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3 C - Si C epitaxialfilmgrown on thin Si wafers bonded to polycrystalline SiC substrates. At 673 K , up to a 51.75 ± 0.04 % change in sensor output current and a change in the device temperature of up to 163.1 ± 0.4 K were demonstrated in response to 100% H 2 in N 2 . Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.Keywords
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