Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry
- 1 December 2006
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 253 (1-2), 182-186
- https://doi.org/10.1016/j.nimb.2006.10.027
Abstract
No abstract availableKeywords
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