Properties of pulsed laser deposited scandium-doped barium hexaferrite films
- 15 April 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (8), 4630-4632
- https://doi.org/10.1063/1.370430
Abstract
The properties of thin films of BaSc x Fe 12−x O 19 (x=0.4) were determined by structural and magnetic measurements. Films were deposited by pulsed laserablationdeposition onto c-plane sapphire at oxygen pressures between 10 and 100 mTorr. X-ray diffraction measurements showed all films to be single-phase c-axis oriented hexaferrites with expanded c-axis lattice constants compared to x=0 films. Magnetometry measurements showed that all films had the easy axis (c-axis) normal to the film plane, with a mean saturation magnetization value of 3.8 kG. The mean uniaxial anisotropy field value was 10.6 kOe. This ability to adjust the uniaxial anisotropy field in hexaferrite films through selective substitution will be important for future planar microwave devices.Keywords
This publication has 5 references indexed in Scilit:
- Coefficients of thermal expansion for barium hexaferriteJournal of Applied Physics, 1996
- Oriented barium hexaferrite thick films grown on c-plane and m-plane sapphire substratesIEEE Transactions on Magnetics, 1994
- Thin-film ferrites for microwave and millimeter-wave applicationsJournal of Magnetism and Magnetic Materials, 1990
- Anisotropy fields and FMR linewidth in single-crystal Al, Ga and Sc substituted hexagonal ferrites with M structureMaterials Research Bulletin, 1984
- Hexagonal Ferrites For Millimeter Wave ApplicationsPublished by SPIE-Intl Soc Optical Eng ,1982