Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As
- 10 October 2006
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 74 (15), 155203
- https://doi.org/10.1103/physrevb.74.155203
Abstract
We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%–2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.
Keywords
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