A 64Mb MRAM with clamped-reference and adequate-reference schemes
- 1 February 2010
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 64 Mb spin-transfer-torque MRAM in 65 nm CMOS is developed. A 47 mm 2 die uses a 0.3584 ¿m 2 cell with a perpendicular-TMR device. To achieve read-disturb immunity for the reference cell, a clamped-reference scheme is adopted. An adequate-reference scheme is implemented to suppress read-margin degradation due to the resistance variation of reference cells.Keywords
This publication has 2 references indexed in Scilit:
- A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference SchemeIEEE Journal of Solid-State Circuits, 2010
- Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008