Bias-dependent performance of high-power AlGaN/GaN HEMTs

13 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 17
https://doi.org/10.1109/iedm.2001.979515

Abstract

Large-signal behavior with a fixed load and varying supply voltages was proposed for characterizing the quality of AlGaN/GaN HEMTs. Improved devices demonstrated constantly high PAEs of 56-62% at 8 GHz throughout a wide voltage range from 10 to 40 V. These 300-/spl mu/m-wide devices also generated 3.1-W output power with only 3.4-dB gain compression at 45 V, which translates to 10.3-W/mm power density; the highest for any FET of the same size. Author(s) Wu, Y.-F. Cree Lighting Co., Goleta, CA, USA Chavarkar, P.M. ; Moore, M. ; Parikh, P. ; Mishra, U.K.

Keywords

ALUMINUM GALLIUM NITRIDE
GALLIUM NITRIDE
HEMTS
MODFETS
VOLTAGE
POWER GENERATION
HIGH POWER MICROWAVE GENERATION
MICROWAVE FETS
IMPEDANCE
MICROWAVE TRANSISTORS

This publication has 1 reference indexed in Scilit:

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003

Cited by 14 articles