Shallow impurity states and transition energies in cylindrical GaAs–Ga0.6Al0.4As quantum well wires under applied magnetic fields
- 5 August 2005
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 17 (33), 5049-5058
- https://doi.org/10.1088/0953-8984/17/33/009
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Mechanisms of Self-Ordering of Quantum Nanostructures Grown on Nonplanar SurfacesPhysical Review Letters, 1998
- Tunneling and coupling between one-dimensional states in double quantum wiresPhysical Review B, 1998
- Self-ordering of quantum-wire superlattices on V-grooved substratesPhysical Review B, 1998
- Interimpurity light absorption in thin wires of III-V-type semiconductorsSemiconductors, 1998
- Polarization Anisotropy and Valence Band Mixing in Semiconductor Quantum WiresPhysical Review Letters, 1997
- Electric-field effects on confined hydrogenic impurities in semiconductorsPhysical Review B, 1991
- Stark effect on confined impurities in semiconductor multi-quantum-well structuresSuperlattices and Microstructures, 1990
- Direct inter-conduction-subband optical absorption of thin zinc-blende-structure-semiconductor rectangular wiresPhysical Review B, 1990
- Optical-absorption spectra associated with impurities in a GaAs-(Ga,Al)As quantum wellPhysical Review B, 1989
- Binding of Shallow Donor Impurities in Quantum-Well StructuresPhysical Review Letters, 1985