Observation of Room Temperature Current Oscillation in InGaAs/InAlAs MQW Pin Diodes
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A), L928
- https://doi.org/10.1143/jjap.25.l928
Abstract
Oscillatory behavior of current in the forward current-voltage characteristics for InGaAs/InAlAs multiple quantum well pin diodes was observed at room temperature for the first time. This oscillation became extremely clear at low temperature (80 K), and the oscillatory bias voltage region shrank with decreasing the well numbers.Keywords
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