Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H2/Cl2, Ar/Cl2and BCl3/Cl2Plasmas
- 1 March 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No), L257-L259
- https://doi.org/10.1143/jjap.42.l257