The black silicon method II:The effect of mask material and loading on the reactive ion etching of deep silicon trenches
- 4 February 1995
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 27 (1-4), 475-480
- https://doi.org/10.1016/0167-9317(94)00149-o
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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