Si/SiGe heterostructure parameters for device simulations
- 20 August 2004
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 19 (10), 1174-1182
- https://doi.org/10.1088/0268-1242/19/10/002
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- 0.1 [micro sign]m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmaxElectronics Letters, 2000
- Electronic-band parameters in strained alloys on substratesPhysical Review B, 1993
- Heterojunction band lineups in Si-Ge alloys using spatially resolved electron-energy-loss spectroscopyPhysical Review B, 1993
- Valence-band offsets at strained Si/Ge interfacesPhysical Review B, 1991
- Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)Journal of Vacuum Science & Technology B, 1990
- Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge systemPhysical Review B, 1989
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Theoretical calculations of semiconductor heterojunction discontinuitiesJournal of Vacuum Science & Technology B, 1986
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958