Spatially independent VCSEL models for the simulation of diffusive turn-off transients
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 17 (1), 95-102
- https://doi.org/10.1109/50.737427
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Gigabyte/s data communications with the POLO parallel optical linkPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- OPTOBUS/sup TM/ I: a production parallel fiber optical interconnectPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- VCSELs bonded directly to foundry fabricated GaAs smart pixel arraysIEEE Photonics Technology Letters, 1997
- Statistics of transverse mode turn-on dynamics in VCSELsIEEE Journal of Quantum Electronics, 1997
- High-speed characteristics of VCSELsPublished by SPIE-Intl Soc Optical Eng ,1997
- Theoretical analysis of modulation response and second-order harmonic distortion in vertical-cavity surface-emitting lasersIEEE Journal of Quantum Electronics, 1996
- Spontaneous emission factor of a microcavity DBR surface-emitting laserIEEE Journal of Quantum Electronics, 1991
- Long-Wavelength Semiconductor LasersPublished by Springer Science and Business Media LLC ,1986
- Effect of gain saturation on injection laser switchingJournal of Applied Physics, 1979
- Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasersIEEE Journal of Quantum Electronics, 1978