Technology, Capabilities, and Performance of Low Power Terahertz Sources
- 30 August 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Terahertz Science and Technology
- Vol. 1 (1), 33-53
- https://doi.org/10.1109/tthz.2011.2159561
Abstract
New and emerging terahertz technology applications make this a very exciting time for the scientists, engineers, and technologists in the field. New sensors and detectors have been the primary driving force behind the unprecedented progress in terahertz technology, but in the last decade extraordinary developments in terahertz sources have also occurred. Driven primarily by space based missions for Earth, planetary, and astrophysical science, frequency multiplied sources have dominated the field in recent years, at least in the 2-3 THz frequency range. More recently, over the past few years terahertz quantum cascade lasers (QCLs) have made tremendous strides, finding increasing applications in terahertz systems. Vacuum electronic devices and photonic sources are not far behind either. In this article, the various technologies for terahertz sources are reviewed, and future trends are discussed.Keywords
This publication has 100 references indexed in Scilit:
- Optimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodesApplied Physics Letters, 2007
- HBV tripler with 21% efficiency at 102 GHzElectronics Letters, 2006
- 240 GHz active modelocked laser diodeElectronics Letters, 2005
- Power-amplifier modules covering 70-113 GHz using MMICsIEEE Transactions on Microwave Theory and Techniques, 2001
- 100 GHz optical pulse generation using Fabry-Perot laser under continuous wave operationElectronics Letters, 2001
- Schottky diode tripler for 210 GHzElectronics Letters, 2000
- Theoretical performance of novel multipliers at millimeter and submillimeter wavelengthsInternational Journal of Infrared and Millimeter Waves, 1991
- Numerical simulations of the capacitance of forward-biased Schottky-diodesSolid-State Electronics, 1991
- A simple model for computer simulation of Schottky-barrier diodesSolid-State Electronics, 1984
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970