From FinFET to nanowire ISFET

Abstract

A p-type FinFET manufacturing process has been presented. It is a starting point for development of H⁺ ion-sensitive n-type nanowire FETs (ISFETs). In the paper, new process steps are pointed out together with SEM examination. Characteristics of the n-type junctionless FETs have been measured in buffer solutions in a beaker and in contact with a single drop of the liquid. ISFET current versus pH and voltage versus pH curves have been presented and discussed. Relatively small hysteresis and drifts in pH measurements have been found.