An Integrated 4-GHz Balanced Transistor Amplifier
- 1 March 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 2 (1), 4-9
- https://doi.org/10.1109/jssc.1967.1049774
Abstract
This paper presents performance data and design information on a broadband 4-GHz balanced transistor amplifier being developed for possible use in microwave radio relay systems. The balanced stripline circuitry and passive components are integrally fabricated on a 1.5-inch-square alumina substrate using thin-film technology. A comprehensive description is presented of the circuit design, mechanical fabrication techniques, and long-term stability tests. Three-stage amplifiers give 15 dB of gain at 4 GHz with a 3-dB bandwidth of 1000 MHz. Input and output VSWR'S were below 1.05 with a noise figure of 7 dB. A mean time to failure of more than 10/sup 6/ hours has been indicated for a complete three-stage device by data obtained on accelerated component aging tests.Keywords
This publication has 5 references indexed in Scilit:
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- Design Theory of Balanced Transistor AmplifiersBell System Technical Journal, 1965
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