Protective Surface Coatings on Semiconductor Nuclear Radiation Detectors
Open Access
- 1 January 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 27 (1), 247-251
- https://doi.org/10.1109/tns.1980.4330834
Abstract
Surface states on germanium p-i-n junctions have been investigated using deep level transient spectroscopy (DLTS) and collimated beams of 60 keV gamma-rays. The DLTS spectra have a characteristic signature for each surface treatment but the spectra are complex and not readily interpretable as to suitability for radiation detectors. Collimated gamma-ray beams give a direct measure of surface channel effects and typeness. Hydrogenated amorphous germanium (a-Ge:H) was explored as a surface layer to adjust the electrical state and passivate the surface. Our measurements show that these layers produce flat band conditions, introduce no additional noise and appear to be stable against a variety of ambients.Keywords
This publication has 1 reference indexed in Scilit:
- Effect of Evaporated Dielectric Materials on the Surface of High Purity GermaniumJournal of the Electrochemical Society, 1976