Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (10), 1170-1172
- https://doi.org/10.1109/68.329628
Abstract
A uniform In/sub 0.05/Ga/sub 0.95/As ternary substrate was grown by using liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material at a constant temperature, and InGaAs/InGaAsP strained single quantum well (SQW) lasers were fabricated on the substrate for the first time. The lasers lased at 1.03 /spl mu/m and exhibited low threshold current density of 222 A/cm/sup 2/ and excellent characteristic temperature of 221 K, showing that the ternary substrate has a sufficient quality for laser fabrication.Keywords
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