Novel aspects of the growth of nitrides by MOVPE
- 26 July 2001
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 13 (32), 6935-6944
- https://doi.org/10.1088/0953-8984/13/32/304
Abstract
Recent topics in the growth of group III nitrides by MOVPE are reviewed. The process of low-temperature deposition of the buffer layer and the effect of the low-temperature-deposited interlayer on the growth of AlGaN are discussed. The growth of AlGaN on grooved GaN and on substrates is reviewed. Finally, recent topics on the growth of In-containing alloys in terms of the future aspects of new devices are presented.Keywords
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