HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2–6 µm range
- 1 July 2003
- journal article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 32 (7), 602-607
- https://doi.org/10.1007/s11664-003-0039-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Midinfrared IV–VI vertical-cavity surface-emitting lasers with zero-, two-, and three-dimensional systems in the active regionsApplied Physics Letters, 2002
- MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arraysJournal of Electronic Materials, 2001
- A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arraysJournal of Electronic Materials, 2001
- MCT technology challenges for mass productionJournal of Electronic Materials, 2001
- MBE growth and device processing of MWIR HgCdTe on large area Si substratesJournal of Electronic Materials, 2001
- Single- and two-color infrared focal plane arrays made by MBE in HgCdTePublished by SPIE-Intl Soc Optical Eng ,2000
- 33-µm microcavity light emitter for gas detectionOptics Letters, 2000
- Near-room-temperature mid-infrared interband cascade laserApplied Physics Letters, 1998
- Long wavelength infrared (λ≂11 μm) quantum cascade lasersApplied Physics Letters, 1996
- 3.2 μm infrared resonant cavity light emitting diodeApplied Physics Letters, 1995