Mechanisms of amorphization in ion implanted crystalline silicon
- 1 June 1993
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 514-518
- https://doi.org/10.1016/0168-583x(93)96171-8
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Determination of diffusion mechanisms in amorphous siliconPhysical Review B, 1992
- Amorphous-crystal silicon interfaces: structure and movement under ion beam irradiationApplied Surface Science, 1992
- Ion-Assisted Nucleation in Amorphous Silicon: Ion Mass and Dose Rate EffectsEurophysics Letters, 1991
- Structural relaxation and defect annihilation in pure amorphous siliconPhysical Review B, 1991
- Ion-beam-induced epitaxial crystallization and amorphization in siliconMaterials Science Reports, 1990
- Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous siliconPhysical Review B, 1990
- Structural characterization of damage in Si(100) produced by MeV Si+ ion implantation and annealingJournal of Materials Research, 1990
- Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in siliconJournal of Materials Research, 1988
- A defect model for ion-induced crystallization and amorphizationJournal of Materials Research, 1988
- Nucleation of damage centres during ion implantation of siliconRadiation Effects, 1971