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The SPT cell—A new substrate-plate trench cell for DRAMs
Home
Publications
The SPT cell—A new substrate-plate trench cell for DRAMs
The SPT cell—A new substrate-plate trench cell for DRAMs
NL
N. Lu
N. Lu
PC
P. Cottrell
P. Cottrell
WC
W. Craig
W. Craig
SD
S. Dash
S. Dash
DC
D. Critchlow
D. Critchlow
RM
R. Mohler
R. Mohler
BM
B. Machesney
B. Machesney
TN
T. Ning
T. Ning
WN
W. Noble
W. Noble
RP
R. Parent
R. Parent
RS
R. Scheuerlein
R. Scheuerlein
ES
E. Sprogis
E. Sprogis
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1 January 1985
conference paper
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
p.
771-772
https://doi.org/10.1109/iedm.1985.191092
Abstract
No abstract available
Keywords
CMOS TECHNOLOGY
CAPACITORS
SILICON
ELECTRODES
FUSION POWER GENERATION
SURFACE TOPOGRAPHY
IMPLANTS
SILICIDES
RANDOM ACCESS MEMORY
PARASITIC CAPACITANCE
Cited by 13 articles