Properties of Silicon and Germanium
- 1 November 1952
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 40 (11), 1327-1337
- https://doi.org/10.1109/jrproc.1952.273956
Abstract
This article provides the latest experimental information on those fundamental properties of germanium and silicon which are of device interest, currently or potentially. Electrical properties, especially carrier density and mobility, have been treated in greatest detail. Descriptive material has been provided to the extent necessary to give physical background.This publication has 20 references indexed in Scilit:
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- Transistor Electronics: Imperfections, Unipolar and Analog TransistorsProceedings of the IRE, 1952
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- Growth of Germanium Single Crystals ContainingJunctionsPhysical Review B, 1951
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- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949
- Investigation of Hole Injection in Transistor ActionPhysical Review B, 1949