A micron-thickness, planar Schottky diode chip for terahertz applications with theoretical minimum parasitic capacitance
- 4 December 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1305-1308 vol.3
- https://doi.org/10.1109/mwsym.1990.99818
Abstract
The design and fabrication of a novel planar Schottky diode with greatly reduced shunt capacitance for millimeter- and submillimeter-wave applications is described. The dominant pad-to-pad shunt capacitance is minimized by replacing the substrate GaAs with a low-dielectric substitute. This replacement substrate can be easily removed by the user after the device is soldered into the mixer circuit. This will yield the minimum possible pad-to-pad shunt capacitance.Keywords
This publication has 3 references indexed in Scilit:
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- Low-parasitic, planar Schottky diodes for millimeter-wave integrated circuitsIEEE Transactions on Microwave Theory and Techniques, 1990
- A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave ApplicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987