Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes

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Abstract
InGaN/GaN multi-quantum well (MQW) light emitting diodes with heavily Mg doped and unintentionally doped (UID) low-temperature Al0.2Ga0.8N electron blocking layer (EBL) were investigated. Broad short-wavelength electroluminescence peak, which has strong relative intensity to the main emission, was found in the UID-EBL sample at cryogenic temperatures. Study suggests that the broad peak is emitted by the sidewall MQWs. This result indicates that the electroluminescence of sidewall MQWs, in which the carrier density is high enough, can be detected at cryogenic temperatures. The lineshape variation with current density reveals detailed information on the process of carrier injection into the sidewall MQWs.
Funding Information
  • The National Natural Science Foundation of China (No. 51072076)
  • the National High Technology Research and Development Program of China (No. 2011AA03A101, No. 2012AA041002)
  • the Key Program of the National Natural Science Foundation of China (No. 61334001)
  • the Fund for Less Developed Regions of the National Natural Science Foundation of China (Grant No. 11364034)
  • The National Key Technology Research and Development Program of the Ministry of Science and Technology of China (No. 2011BAE32B01)