Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl2/O2 high density plasmas
- 1 March 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (2), 214-226
- https://doi.org/10.1116/1.588355