Development of High Electron Mobility Transistor

1 December 2005

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 44 (12R)
https://doi.org/10.1143/jjap.44.8263

Abstract

The development of the high electron mobility transistor (HEMT) provides a good illustration of the way a new device emerges and evolves toward commercialization. This article will focus on these events that the author feels might be of interest to young researchers. Recent progress and future trends in HEMT technology are also described.

Keywords

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