Preparation of Heavily N-Type ZnSe Doped by Iodine in Remote Plasma Enhanced Metal Organic Chemical Vapor Deposition

Abstract

Iodine-doped zinc selenide (ZnSe:I) layers were grown by remote plasma enhanced metal organic chemical vapor deposition (RPE-MOCVD) using n-butyliodide (n-BtI). The carrier concentration was controlled from 2×10¹⁶ to 8.2×10¹⁹ cm^-3 by the dopant flow rate, where the mobilities renged from 200 to 50 cm² V^-1 s^-1, respectively. The low-resistivity of 7.3×10^-4 Ω cm was attained at the highest doping level.