Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots
- 6 February 2013
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 25 (14), 1987-1992
- https://doi.org/10.1002/adma.201204572
Abstract
Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.Keywords
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