A Novel Vertical Field Plate Lateral Device With Ultralow Specific On-Resistance
- 20 December 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 61 (2), 518-524
- https://doi.org/10.1109/ted.2013.2294643
Abstract
A novel vertical field plate (VFP) lateral device with ultralow specific on-resistance (RON,sp) is proposed in this paper. The VFP surrounded by oxide is inserted in the bulk of the drift region. Compared to the surface local depletion of the conventional lateral field plate (LFP), the depletion layer of the VFP expands to the bulk of the drift region, which enhances the bulk electric field. Therefore, ultralow RON,sp is realized in the VFP device due to high drift-region doping (Nd) and short cell pitch. An analytical FP model is developed to describe the behavior of the VFP, in which the breakdown voltage (BV) and Nd are found to be proportional to the FP factor k. Then the uniform-doped VFP laterally diffused MOSs and the step-doped VFP laterally diffused MOS are proposed. The optimized device exhibits a BV of 945 V and a RON,sp of 34 mΩ·cm2 which are superior to those of similar devices and the silicon limit.Keywords
This publication has 13 references indexed in Scilit:
- Ultra-low specific on-resistance SOI high voltage trench LDMOS with dielectric field enhancement based on ENBULF conceptPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- 300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant TechnologyIEEE Electron Device Letters, 2012
- Low on-Resistance SOI Dual-Trench-Gate MOSFETIEEE Transactions on Electron Devices, 2011
- On the static performance of the RESURF LDMOSFETS for power ICs2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009
- Developments in Si and SiO 2 etching for MEMS-based optical applicationsPublished by SPIE-Intl Soc Optical Eng ,2004
- Over 1000 V n-ch LDMOSFET and p-ch LIGBT with JI RESURF structure and multiple floating field platePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A Review of SiO[sub 2] Etching Studies in Inductively Coupled Fluorocarbon PlasmasJournal of the Electrochemical Society, 2001
- High-voltage devices for 0.5-μm standard CMOS technologyIEEE Electron Device Letters, 2000
- High-voltage planar devices using field plate and semi-resistive layersIEEE Transactions on Electron Devices, 1991