Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications
- 30 December 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 58 (3), 593-599
- https://doi.org/10.1109/ted.2010.2094622
Abstract
We demonstrated a 4H-SiC vertical Schottky diode for betavoltaic application using interdigit front metallization. A relevant increase in the betavoltaic short-circuit current with respect to a device with a continuous standard front electrode was achieved with this novel layout allowing to collect also low-energy electrons. In particular, by irradiating the device with a monochromatic electron beam (e-beam) of 17 keV, an internal gain that is 1.4 times higher than in conventional devices was obtained. An open-circuit voltage of ~1 V was obtained for an illumination e-beam current density of 10-8 A/cm2.Keywords
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