Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states
- 6 January 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (1), 105-107
- https://doi.org/10.1063/1.119276
Abstract
The resonant tunneling of electrons through a 20 nm scale InAs quantum dot bound by a pair of very thin AlAs barriers is studied. A well-resolved composite peak resulting from the ground 1s states was observed at 4.2 K in current–voltage characteristics. By investigating the effects of inplane magnetic fields, the shape of the wave function and the spatial extent of the first two electronic states are clarified.Keywords
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