Metal Induced Lateral Crystallization of Amorphous Silicon Through a Silicon Nitride Cap Layer
- 1 January 2003
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 6 (1), G16-G18
- https://doi.org/10.1149/1.1527411
Abstract
We studied a new method of Ni-induced crystallization of amorphous silicon (a-Si) through a silicon-nitride cap layer. A 0.5 nm of Ni layer was deposited on the layers and then this was annealed in a rapid thermal annealing system. The Ni diffused through the cap layer and formed the nuclei. Then, disk-shaped grains were grown from these nuclei. The grain size is between 20 and 90 μm, and the surface roughness of the poly-Si is 0.76 nm, which is smoother than that (0.96 nm) of the poly-Si without a cap layer. © 2002 The Electrochemical Society. All rights reserved.Keywords
This publication has 12 references indexed in Scilit:
- Characterization of an individual grain boundary in metal-induced laterally crystallized polycrystalline silicon thin-film devicesIEEE Transactions on Electron Devices, 2001
- Characterization of MOSFETs fabricated on large-grain polysilicon on insulatorSolid-State Electronics, 2001
- Crystallization of Amorphous Silicon Thin Films Using a Viscous Nickel SolutionJournal of the Electrochemical Society, 2001
- Lateral growth control in excimer laser crystallized polysiliconThin Solid Films, 1999
- Low temperature solid phase crystallization of amorphous silicon at 380 °CJournal of Applied Physics, 1998
- A High-Performance Polycrystalline Silicon Thin-Film Transistor Using Metal-Induced Crystallization with Ni SolutionJapanese Journal of Applied Physics, 1998
- Electric-field-enhanced crystallization of amorphous siliconNature, 1998
- Nickel atomic diffusion in amorphous siliconApplied Physics Letters, 1995
- Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealingApplied Physics Letters, 1988
- Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater OvenJournal of the Electrochemical Society, 1982