Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
- 22 January 2009
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 9 (2), 725-730
- https://doi.org/10.1021/nl8032526
Abstract
We report the formation of sub-5 nm ultrashallow junctions in 4 in. Si wafers enabled by the molecular monolayer doping of phosphorus and boron atoms and the use of conventional spike annealing. The junctions are characterized by secondary ion mass spectrometry and noncontact sheet resistance measurements. It is found that the majority (∼70%) of the incorporated dopants are electrically active, therefore enabling a low sheet resistance for a given dopant areal dose. The wafer-scale uniformity is investigated and found to be limited by the temperature homogeneity of the spike anneal tool used in the experiments. Notably, minimal junction leakage currents (2) are observed that highlights the quality of the junctions formed by this process. The results clearly demonstrate the versatility and potency of the monolayer doping approach for enabling controlled, molecular-scale ultrashallow junction formation without introducing defects in the semiconductor.Keywords
This publication has 21 references indexed in Scilit:
- Phosphine Oxide Monolayers on SiO2 SurfacesAngewandte Chemie-International Edition, 2008
- Controlled nanoscale doping of semiconductors via molecular monolayersNature Materials, 2007
- Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology NodesJapanese Journal of Applied Physics, 2006
- Gas cluster ion beam infusion processing of semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006
- Ultra-shallow junction formation by B18H22 ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005
- Technological challenges of advanced CMOS processing and their impact on design aspectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- 10–15 nm Ultrashallow Junction Formation by Flash-Lamp AnnealingJapanese Journal of Applied Physics, 2002
- The drive to miniaturizationNature, 2000
- Implantation and transient boron diffusion: the role of the silicon self-interstitialNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995