Optical Third-Harmonic Generation in Reflection from Crystalline and Amorphous Samples of Silicon
- 29 September 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (13), 1647-1650
- https://doi.org/10.1103/physrevlett.57.1647
Abstract
This Letter reports optical third-harmonic generation in reflection from ion-implanted samples of silicon. The third-harmonic signal is found to exhibit certain novel polarization and rotational dependences, which can be understood with the aid of measurements using electron and ion beam techniques. Our observations provide quantitative information on the transformation from the crystalline to the amorphous state of silicon.Keywords
This publication has 5 references indexed in Scilit:
- Third harmonic generation as a structural diagnostic of ion-implanted amorphous and crystalline siliconApplied Physics Letters, 1986
- Computer Generation of Structural Models of Amorphous Si and GePhysical Review Letters, 1985
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Study of Optical Third-Harmonic Generation in ReflectionPhysical Review B, 1969
- Study of Optical Effects Due to an Induced Polarization Third Order in the Electric Field StrengthPhysical Review B, 1965