The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE
- 24 November 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 25 (5), 1265-1274
- https://doi.org/10.1109/tpel.2009.2036850
Abstract
In this paper, the isothermal model of power MOS transistors offered by the producer of these devices and the electrothermal model of these devices proposed by the authors are presented. The results of experimental verification of both the models are given as well.Keywords
This publication has 9 references indexed in Scilit:
- The compact d.c. electrothermal model of power MOSFETs for SPICEInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009
- Modelling CoolMOSC3 transistor characteristics in SPICEInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009
- Modelling TrenchMOSFETs in SPICEPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Modeling Nonisothermal Characteristics of Switch-Mode Voltage RegulatorsIEEE Transactions on Power Electronics, 2008
- Modelling CoolMOS transistors in SPICEIEE Proceedings - Circuits, Devices and Systems, 2006
- Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. II. Practice and experimentsIEEE Transactions on Power Electronics, 1998
- A new evaluation method of thermal transient measurement resultsMicroelectronics Journal, 1997
- BSIM: Berkeley short-channel IGFET model for MOS transistorsIEEE Journal of Solid-State Circuits, 1987
- Modeling and simulation of insulated-gate field-effect transistor switching circuitsIEEE Journal of Solid-State Circuits, 1968