Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure
- 14 June 2012
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 116 (25), 13650-13653
- https://doi.org/10.1021/jp303016f
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Solution-Processed Zinc Oxide Thin Film as a Buffer Layer for Polymer Solar Cells with an Inverted Device StructureThe Journal of Physical Chemistry C, 2010
- High-performance polymer photovoltaic devices with inverted structure prepared by thermal laminationSolar Energy Materials and Solar Cells, 2009
- High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nmScience, 2009
- ZnO Nanowire UV Photodetectors with High Internal GainNano Letters, 2007
- Band‐Offset Engineering for Enhanced Open‐Circuit Voltage in Polymer–Oxide Hybrid Solar CellsAdvanced Functional Materials, 2006
- Ultrasensitive solution-cast quantum dot photodetectorsNature, 2006
- General Route to Vertical ZnO Nanowire Arrays Using Textured ZnO SeedsNano Letters, 2005
- Infrared Quantum DotsAdvanced Materials, 2005
- Near-infrared fluorescent type II quantum dots for sentinel lymph node mappingNature Biotechnology, 2003
- Low‐Temperature Wafer‐Scale Production of ZnO Nanowire ArraysAngewandte Chemie-International Edition, 2003