Absorption, Reflectance, and Luminescence of GaN Single Crystals

Abstract
Analysis of the low-temperature absorption, reflectance, and emission spectra of oriented single crystals of hexagonal GaN demonstrates that the features found at 3.62 eV (EC) and 3.72 eV (EC) are due to the formation of free excitons associated with a direct energy gap. A close analogy exists between these results and similar data from ZnO, consistent with the relative position of Zn and Ga, and O and N atoms in the Periodic Table. Luminescence spectra present good, although not conclusive, evidence for the hypothesis that this direct gap is also the fundamental energy gap in GaN.