Yield Points and Delay Times in Single Crystals

Abstract

Stress‐strain curves and transient creep curves for single crystals are obtained from calculations based on the observed behavior of dislocations in LiF, and the strain rate equation, ε̇=bnv. The pronounced yield drops and apparent ``delay times'' predicted by the calculations are observed experimentally. This agreement between calculation and experiment implies that further consideration of the calculations may give some insight into the yield point and transient creep behavior of single crystals. Several parameters are varied in the calculation in order to determine the effect of such things as testing machine speed, machine hardness, rate of dislocation multiplication, work‐hardening rate, number of mobile dislocations initially present, and the dependence of dislocation velocity on stress. The parameter that most strongly influences the yield points and transient creep behavior of a given material is n₀, the number of mobile dislocations initially present. The wide range of observed yield point and transient creep behavior of various materials can be rationalized in terms of how dislocation velocity varies with stress; the less sensitive is the velocity to the applied stress, the more pronounced will be the yield drop or delay time. The calculation is applicable only when n₀≠0; and the yield points and yield drops develop continuously and relatively gradually as dislocation motion and multiplication begin before the upper yield point is reached. The upper yield stress is not closely related to the stress required to unpin dislocations. It is necessary to distinguish between this type of yield point, which is commonly observed, and the Cottrell type of yield point in which dislocation motion begins at the upper yield stress, and in which the upper yield stress is related to the unpinning stress.