Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation
- 26 November 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (22), 2121-2124
- https://doi.org/10.1103/physrevlett.53.2121
Abstract
A double-peak structure is observed in the Cu concentration profile after low-energy pulsed-laser irradiation of Cu-implanted Si. From the Cu surface segregation a primary melt depth is inferred. In addition, Cu segregation at the depth of the amorphous-crystal interface gives evidence for a secondary melt propagating through the amorphous layer towards the crystalline substrate. The results imply a large difference in melting temperature, heat of melting, and heat conductivity between amorphous Si and crystalline Si.Keywords
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