Electrodes for ferroelectric thin films
- 1 December 1993
- journal article
- research article
- Published by Informa UK Limited in Integrated Ferroelectrics
- Vol. 3 (4), 321-332
- https://doi.org/10.1080/10584589308216687
Abstract
Platinum and ruthenium oxide (RuO2) deposited by ion beam sputter-deposition are evaluated for use as electrodes for PZT thin film capacitors. The effect of deposition temperature, film thickness, and the presence of oxygen on hillock formation in platinum is discussed. It is shown that the hillock density in Pt/Ti/SiO2/Si films can be significantly reduced by properly controlling the processing conditions and film thickness. Stress measurements correlate with the experimental observation that depositing thinner platinum films (x adhesion layer. RuO2 electrodes are compared to Pt in terms of resistivity, surface morphology, microstructure and film orientation.Keywords
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