Electro-Optical Effect of Bi4Ge3O12 Crystals for Optical Voltage Sensors
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S)
- https://doi.org/10.1143/jjap.32.4288
Abstract
The electro-optical coefficient r 41 of Bi4Ge3O12, corresponding to the sensitivity of the optical voltage sensor, and the temperature dependence of response characteristics to applied step voltage are studied. From these measurements, two kinds of dc drift are found to exist in Bi4Ge3O12 crystals. One is found to be due to the relaxation of the piezoelectric polarization (type (a)), and the other is explained as the deduction phenomenon by the thermally induced space-charge field (type (b)). By correcting for dc drift of type (a), the accurate value of r 41=1.09×10-12 m/V is obtained at 855 nm wavelength.Keywords
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