Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
- 18 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (16), 2263-2264
- https://doi.org/10.1063/1.110547
Abstract
Modulation‐doped Si/GexSi1−x/Ge/GexSi1−x structures were fabricated in which a thin Ge layer was employed as the conduction channel for the two‐dimensional hole gas. The strained heterostructure was fabricated on top of a low threading dislocation density, totally relaxed, GexSi1−x buffer layer with a linearly graded Ge concentration profile. The best mobility of the two‐dimensional hole gas is 55 000 cm2/V s at 4.2 K with a concentration‐dependent hole effective mass of ≤0.10m0. The effect of the Ge/GeSi interface roughness on the 2DHG mobility was studied.Keywords
This publication has 8 references indexed in Scilit:
- Fabrication of high mobility two-dimensional electron and hole gases in GeSi/SiJournal of Applied Physics, 1993
- Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formationPhysical Review Letters, 1993
- Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in SiJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °CJournal of Applied Physics, 1991
- Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi HeterostructuresMRS Proceedings, 1991
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986