Electronic structure of superlattices of graphene and hexagonal boron nitride
- 14 November 2011
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 22 (3), 919-922
- https://doi.org/10.1039/c1jm14895h
Abstract
We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.Keywords
This publication has 29 references indexed in Scilit:
- Graphene transistorsNature Nanotechnology, 2010
- N-Doping of Graphene Through Electrothermal Reactions with AmmoniaScience, 2009
- Graphene field-effect devicesThe European Physical Journal Special Topics, 2007
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Structural and electronic properties ofh-BNPhysical Review B, 2003
- Bandgap energy of graphite-like hexagonal boron nitrideJournal of Physics and Chemistry of Solids, 2001
- Energetic states in the boron nitride band gapJournal of Physics and Chemistry of Solids, 1992
- Electronic structure and core exciton of hexagonal boron nitridePhysical Review B, 1984
- On the electronic structure of hexagonal boron nitridePhysica Status Solidi (b), 1979