Comment on ‘‘Spectroscopy of excited states inIn0.53Ga0.47As-InP single quantum wells grown by chemical-beam epitaxy’’

Abstract

Sauer et al. [Phys. Rev. B 34, 9023 (1986)] have recently determined the band offsets of lattice-matched ${\mathrm{In}}_{0.53}$ ${\mathrm{Ga}}_{0.47}$As-InP heterojunctions. We here show that the valence-band offset found by those authors (0.254 eV) agrees with that estimated by the dielectric-midgap-point method [M. Cardona and N. E. Christensen, Phys. Rev. B 35, 6182 (1987)].