Low Temperature Polysilicon Materials and Devices
- 1 January 1996
- journal article
- Published by Springer Science and Business Media LLC in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 50 references indexed in Scilit:
- Low temperature polysilicon TFTs: a comparison of solid phase and laser crystallizationMicroelectronic Engineering, 1995
- Kinetics of Crystallization of Amorphous and Mixed-Phase Silicon Films Deposited by Pyrolysis of Disilane Gas at Very Low PressureJapanese Journal of Applied Physics, 1995
- (100) Oriented Poly‐Si Film Grown by Ultrahigh Vacuum Chemical Vapor DepositionJournal of the Electrochemical Society, 1994
- Formation of Sources/Drains Using Self-Activation Technique on Polysilicon Thin Film TransistorsJapanese Journal of Applied Physics, 1994
- Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and PressuresJournal of the Electrochemical Society, 1992
- Excimer Lasbr Induced Crystallization of thin Amorphous Si Films on SiO2: Implications of Crystallized Microstructures for Phase Transformation MechanismsMRS Proceedings, 1992
- Low-Temperature Polysilicon Thin Film Transistors by Non-Mass-Separated Ion Flux Doping TechniqueJapanese Journal of Applied Physics, 1990
- Solidification of highly undercooled liquid silicon produced by pulsed laser melting of ion-implanted amorphous silicon: Time-resolved and microstructural studiesJournal of Materials Research, 1987
- Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser IrradiationPhysical Review Letters, 1984
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978