High-Energy Neutral Atoms in the Sputtering of ZnO

Abstract

Dips were observed in the distribution curves of the deposition rates of ZnO films prepared both by planar diode and by planar magnetron sputtering. These dips are ascribed to high-energy neutral atoms bombarding the films. The influence of high-energy neutral atoms on the mixed orientation of ZnO film is also investigated in planar diode sputtering. In planar magnetron sputtering, which gives highly [00·2] oriented ZnO films, the correlation between the degree of c-axis orientation and the flux of high-energy neutral atoms is examined. It is found that high-energy neutral atoms should be considered when trying to obtain highly-oriented ZnO films.