Bond lengths around isovalent impurities and in semiconductor solid solutions
- 15 November 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (10), 6217-6220
- https://doi.org/10.1103/physrevb.30.6217
Abstract
Using a valence force field, we predict the symmetric lattice distortions around isovalent impurities in 64 semiconductor-impurity systems. For the five systems for which extended x-ray absorption fine-structure (EXAFS) data are available, the results are in excellent agreement with experiment. Our theory also explains quantitatively, without adjustable parameters, the observed bond-length variations in solid solutions of semiconductor alloys, as well as their excess enthalpies of mixing.
Keywords
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